Thermally-driven motion of current filaments in ESD protection devices

被引:18
|
作者
Pogany, D
Bychikhin, S
Denison, M
Rodin, P
Jensen, N
Groos, G
Stecher, M
Gornik, E
机构
[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria
[2] Infineon Technol, D-81541 Munich, Germany
[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[4] Univ Armed Forces, D-85579 Neubiberg, Germany
关键词
ESD phenomena; moving current filament; thermal mapping; self-heating effects; impact ionization; avalanche transistor; smart power devices;
D O I
10.1016/j.sse.2004.11.022
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Dynamics of localized current filaments is analyzed in electrostatic discharge protection devices of a smart power technology during microsecond long constant current pulses. Experiments performed by backside transient interferometric mapping technique and transmission line pulser stressing are correlated with 3D device simulation. Motion of the filament along the device width and its reflection at the device ends are observed. This behavior is related to the time evolution of the voltage waveform and is explained by the simulation. The filament motion is driven by the temperature gradient in the filament due to the negative temperature dependence of the impact ionization rates. A simplified analytical expression for the filament speed as a function of stress conditions and thermal characteristics is given. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:421 / 429
页数:9
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