Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks

被引：37
|
作者：
Voss, M
Lier, C
Menzel, U
Barwolff, A
Elsaesser, T
机构：
[1] Max-Born-Inst. Nichtlineare O.
来源：
JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 02期
关键词：
D O I：
10.1063/1.360900
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Laser radiation from GaAs/AlGaAs laser diode arrays of high output power is studied during nano-to millisecond carrier injection in temporally and spectrally resolved emission measurements. A red shift of the multimode emission spectrum by up to 12 nm and a concomitant increase of the total bandwidth are caused by a transient rise of the device temperature by up to 50 K. Spatially resolved experiments reveal a lateral temperature difference of about 2 K between the center and the edge emitters. Different laser array/heat sink combinations are investigated in order to reduce the transient temperature increase. (C) 1996 American Institute of Physics.
引用
收藏
页码：1170 / 1172
页数：3
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