Andreev reflection in the fractional quantum Hall effect

被引：42
|
作者：
Sandler, NP [1 ]
Chamon, CD [1 ]
Fradkin, E [1 ]
机构：
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
来源：
PHYSICAL REVIEW B | 1998年 / 57卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.57.12324
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the reflection of electrons and quasiparticles on point-contact interfaces between fractional quantum Hall (FQH) states and normal metals (leads), as well as interfaces between two FQH states with mismatched filling fractions. We classify the processes taking place at the interface in the strong-coupling limit. In this regime a set of quasiparticles can decay into quasiholes on the FQH side and charge excitations on the other side of the junction. This process is analogous to an Andreev reflection in normal-metal/superconductor (N-S) interfaces. [S0163-1829(98)07119-7].
引用
收藏
页码：12324 / 12332
页数：9
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