Atomic layer deposition of hafnium oxide thin films from tetrakis(dimethylamino)hafnium (TDMAH) and ozone

被引：0
|
作者：
Liu, XY [1 ]
Ramanathan, S [1 ]
Seidel, TE [1 ]
机构：
[1] Genus Inc, Sunnyvale, CA 94089 USA
来源：
COMOS FRONT-END MATERIALS AND PROCESS TECHNOLOGY | 2003年 / 765卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hafnium oxide (HfO2) thin films were synthesized from tetrakis(dimethylamino) hafnium (TDMAH) and ozone (O-3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However 03 showed better saturation behavior for O-3 exposure. Yet, 100% step coverage was achieved for similar to100nm trenches with aspect ratio of 35. Temperature dependence of the deposition rate was studied at susceptor temperature from 160 degreesC to 420 degreesC. The lowest deposition rate was observed at 320 degreesC. Mercury probe measurements indicated the dielectric constant increased from 16 to 20 as susceptor temperature increased from 200 degreesC to 320 degreesC. Selected comparisons with tetrakis (ethylmethylamino) hafnium (TEMAH) were also made.
引用
收藏
页码：97 / 102
页数：6
相关论文
共 50 条
  • [21] Atomic layer deposition of hafnium and zirconium oxyfluoride thin films
    Mahuli, Neha
    Cavanagh, Andrew S.
    George, Steven M.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (02):
  • [22] Hafnium silicon oxide films prepared by atomic layer deposition
    Kukli, K
    Ritala, M
    Leskelä, M
    Sajavaara, T
    Keinonen, J
    Gilmer, DC
    Tobin, PJ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 109 (1-3): : 2 - 5
  • [23] Characterization of ultra-thin hafnium oxide films grown on silicon by atomic layer deposition using tetrakis(ethylmethyl-amino) hafnium and water precursors
    Wang, Y.
    Ho, M.-T.
    Goncharova, L. V.
    Wielunski, L. S.
    Rivillon-Amy, S.
    Chabal, Y. J.
    Gustafsson, T.
    Moumen, N.
    Boleslawski, M.
    CHEMISTRY OF MATERIALS, 2007, 19 (13) : 3127 - 3138
  • [24] Atomic layer deposition of thin hafnium oxide films using a carbon free precursor
    Conley, JF
    Ono, Y
    Tweet, DJ
    Zhuang, W
    Solanki, R
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 712 - 718
  • [25] Atomic layer deposition of thin hafnium oxide films using a carbon free precursor
    Conley Jr., J.F. (jconley@sharplabs.com), 1600, American Institute of Physics Inc. (93):
  • [26] Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate
    Conley, JF
    Ono, Y
    Zhuang, W
    Tweet, DJ
    Gao, W
    Mohammed, SK
    Solanki, R
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (05) : C57 - C59
  • [27] Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol
    Liu, Jian
    Lennard, William N.
    Goncharova, Lyudmila V.
    Landheer, Dolf
    Wu, Xiaohua
    Rushworth, Simon A.
    Jones, Anthony C.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (08) : G89 - G96
  • [28] Ozone Based Atomic Layer Deposition of Hafnium Oxide and Impact of Nitrogen Oxide Species
    Delabie, Annelies
    Swerts, Johan
    Van Elshocht, Sven
    Jung, Sung-Hoon
    Raisanen, Petri I.
    Givens, Michael E.
    Shero, Eric J.
    Peeters, Jozef
    Machkaoutsan, Vladimir
    Maes, Jan Willem
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) : D259 - D263
  • [29] Nitridation of hafnium silicate thin films deposited by atomic layer deposition
    Senzaki, Y
    Chatham, H
    Higuchi, R
    Bercaw, C
    DeDontney, J
    PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II, 2004, 2003 (22): : 259 - 264
  • [30] ALD of hafnium oxide thin films from tetrakis(ethylmethylamino)hafnium and ozone (vol 152, pg G213, 2005)
    Liu, XY
    Ramanathan, S
    Longdergan, A
    Srivastava, A
    Lee, E
    Seidel, TE
    Barton, JT
    Pang, D
    Gordon, RG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (05) : L9 - L9
12345