Enhancing the bulk photovoltaic effect by tuning domain walls in epitaxial BiFeO3 films

被引：8
|
作者：
Chen, Yang [1 ]
Wei, Haoming [1 ]
Wang, Mingxu [1 ]
Cao, Bingqiang [2 ]
机构：
[1] Qufu Normal Univ, Sch Phys & Phys Engn, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu 273165, Shandong, Peoples R China
[2] Univ Jinan, Mat Res Ctr Energy & Photoelectrochem Convers, Sch Mat Sci & Engn, Jinan 250022, Shandong, Peoples R China
来源：
NANOTECHNOLOGY | 2021年 / 32卷 / 49期
基金：
中国国家自然科学基金;
关键词：
BiFeO3; epitaxial films; domain wall; bulk photovoltaic effect; CONDUCTION; EFFICIENCY; BEHAVIOR; PHYSICS;
D O I：
10.1088/1361-6528/ac225e
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this letter, the role of domain wall (DW) on bulk photovoltaic effect (BPV) effect in BiFeO3 (BFO) films was studied by x-ray reciprocal space mapping and conductive atomic force microscope. It was found that the domain structure and DW can be tuned by controlling the epitaxial orientation of BFO film. Remarkably, under 1 sun AM 1.5 G illumination, the 109 degrees DW enhances the transport of photogenerated carriers and simultaneously improves the conductivity and power conversion efficiency (PCE). The short-circuit current density and PCE can reach 171.15 mu A cm(-2) and 0.1127%, respectively. Therefore, our study reveals the correlation between the DW and the BPV effect in BFO film and provides a new pathway to improve the PCE of BFO-based photovoltaic device.
引用
下载
收藏
页数：7
相关论文
共 50 条
  • [21] Tailoring the domain structure of epitaxial BiFeO3 thin films
    Giencke, Jon E.
    Folkman, Chad M.
    Baek, Seung-Hyub
    Eom, Chang-Beom
    CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2014, 18 (01): : 39 - 45
  • [22] Surface, bulk, and interface electronic states of epitaxial BiFeO3 films
    Zhang, Jun
    Rutkowski, M.
    Martin, L. W.
    Conry, T.
    Ramesh, R.
    Ihlefeld, J. F.
    Melville, A.
    Schlom, D. G.
    Brillson, L. J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (04): : 2012 - 2014
  • [23] Magnetotransport at Domain Walls in BiFeO3
    He, Q.
    Yeh, C-H.
    Yang, J-C.
    Singh-Bhalla, G.
    Liang, C-W.
    Chiu, P-W.
    Catalan, G.
    Martin, L. W.
    Chu, Y-H.
    Scott, J. F.
    Ramesh, R.
    PHYSICAL REVIEW LETTERS, 2012, 108 (06)
  • [24] Complex domain walls in BiFeO3
    Gareeva, Zukhra
    Dieguez, Oswaldo
    Iniguez, Jorge
    Zvezdin, Anatoly K.
    PHYSICAL REVIEW B, 2015, 91 (06)
  • [25] Ferroelectric domain structures of epitaxial (001) BiFeO3 thin films
    Chen, Y. B.
    Katz, M. B.
    Pan, X. Q.
    Das, R. R.
    Kim, D. M.
    Baek, S. H.
    Eom, C. B.
    APPLIED PHYSICS LETTERS, 2007, 90 (07)
  • [26] Structures and electronic properties of domain walls in BiFeO3 thin films
    Huyan, Huaixun
    Li, Linze
    Addiego, Christopher
    Gao, Wenpei
    Pan, Xiaoqing
    NATIONAL SCIENCE REVIEW, 2019, 6 (04) : 669 - 683
  • [27] Robust domain variants and ferroelectric property in epitaxial BiFeO3 films
    Qiao, Xiaojun
    Geng, Wenping
    Meng, Jianwei
    Sun, Yao
    Bi, Kaixi
    Yang, Yun
    Yu, Junbin
    He, Jian
    Chou, Xiujian
    MATERIALS RESEARCH EXPRESS, 2021, 8 (01)
  • [28] Evidence of bulk photovoltaic effect and large tensor coefficient in ferroelectric BiFeO3 thin films
    Ji, Wei
    Yao, Kui
    Liang, Yung C.
    PHYSICAL REVIEW B, 2011, 84 (09)
  • [29] Epitaxial BiFeO3 nanostructures fabricated by differential etching of BiFeO3 films
    Johann, Florian
    Morelli, Alessio
    Vrejoiu, Ionela
    APPLIED PHYSICS LETTERS, 2011, 99 (08)
  • [30] Intrinsic Conductance of Domain Walls in BiFeO3
    Zhang, Yi
    Lu, Haidong
    Yong, Xingxu
    Cheng, Xiaoxing
    Xie, Lin
    Aoki, Toshihiro
    Li, Linze
    Heikes, Colin
    Lau, Shu Ping
    Schlom, Darrell C.
    Chen, Longqing
    Gruverman, Alexei
    Pan, Xiaoqing
    ADVANCED MATERIALS, 2019, 31 (36)
12345