Enhancing the bulk photovoltaic effect by tuning domain walls in epitaxial BiFeO3 films

被引：8
|
作者：
Chen, Yang [1 ]
Wei, Haoming [1 ]
Wang, Mingxu [1 ]
Cao, Bingqiang [2 ]
机构：
[1] Qufu Normal Univ, Sch Phys & Phys Engn, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu 273165, Shandong, Peoples R China
[2] Univ Jinan, Mat Res Ctr Energy & Photoelectrochem Convers, Sch Mat Sci & Engn, Jinan 250022, Shandong, Peoples R China
来源：
NANOTECHNOLOGY | 2021年 / 32卷 / 49期
基金：
中国国家自然科学基金;
关键词：
BiFeO3; epitaxial films; domain wall; bulk photovoltaic effect; CONDUCTION; EFFICIENCY; BEHAVIOR; PHYSICS;
D O I：
10.1088/1361-6528/ac225e
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this letter, the role of domain wall (DW) on bulk photovoltaic effect (BPV) effect in BiFeO3 (BFO) films was studied by x-ray reciprocal space mapping and conductive atomic force microscope. It was found that the domain structure and DW can be tuned by controlling the epitaxial orientation of BFO film. Remarkably, under 1 sun AM 1.5 G illumination, the 109 degrees DW enhances the transport of photogenerated carriers and simultaneously improves the conductivity and power conversion efficiency (PCE). The short-circuit current density and PCE can reach 171.15 mu A cm(-2) and 0.1127%, respectively. Therefore, our study reveals the correlation between the DW and the BPV effect in BFO film and provides a new pathway to improve the PCE of BFO-based photovoltaic device.
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收藏
页数：7
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