Investigation of the slot mode enhancement of Erbium-doped Polymer Silicon on Insulator waveguide Amplifiers

被引：0

作者：

Serna, Samuel ^{[1
,2
]}

Zhang, Weiwei ^{[1
]}

Zhang, Yonggan ^{[3
]}

Zhang, Meiling ^{[3
]}

Gao, Dingshang ^{[3
]}

Zhang, Daming ^{[4
]}

Cassan, Eric ^{[1
]}

机构：

[1] Univ Paris 11, CNRS UMR 8622, Inst Elect Fondamentale, Bat 220, F-91405 Orsay, France

[2] Inst Opt, Lab Charles Fabry, F-291127 Palaiseau, France

[3] HUST Univ, Wuhan Natl Lab Optoelectron, Wuhan 430074, Hunan, Peoples R China

[4] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelectron, Changchun 130012, Peoples R China

来源：

NANOPHOTONICS V | 2014年 / 9126卷

关键词：

Optical amplification; hybrid silicon photonics; slot waveguides; doped polymers;

D O I：

10.1117/12.2051740

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Erbium doped Polymer hybrid slot waveguide amplifier at lambda(s)=1530 nm with a 1480 nm pumping wavelength is investigated. Both, the waveguide structure parameters and the Er3+-doped polymer intrinsic spectroscopic parameters are swept to analyze the gain contribution sensitivities. Assuming moderate optical transmission losses of 10dB/cm, the predicted net gain typically varies from 0 to 10dB. Due to the excited state absorption (ESA) mechanism in the high intensity slot region, the signal gain is significantly suppressed for large pumping power, leading to the counterintuitive result that there is an optimum pump power value in the sub-100 mW range. The effect of the ion concentration and the ion-ion interaction is considered giving different adjusted parameters in every particular case.

引用

页数：8

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