Antiferromagnetic domain wall engineering in chromium films

被引:15
|
作者
Logan, J. M. [1 ]
Kim, H. C. [1 ]
Rosenmann, D. [2 ]
Cai, Z. [3 ]
Divan, R. [2 ]
Shpyrko, O. G. [4 ]
Isaacs, E. D. [1 ]
机构
[1] Univ Chicago, Dept Phys, Chicago, IL 60637 USA
[2] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[3] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
[4] Univ Calif San Diego, La Jolla, CA 92093 USA
关键词
SPIN-DENSITY WAVES; CR(001) FILMS; CHARGE; MAGNETORESISTANCE; REORIENTATION;
D O I
10.1063/1.4712598
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have engineered an antiferromagnetic domain wall by utilizing a magnetic frustration effect of a thin iron cap layer deposited on a chromium film. Through lithography and wet etching, we selectively remove areas of the Fe cap layer to form a patterned ferromagnetic mask over the Cr film. Removing the Fe locally removes magnetic frustration in user-defined regions of the Cr film. We present x-ray microdiffraction microscopy results confirming the formation of a 90 degrees spin-density wave propagation domain wall in Cr. This domain wall nucleates at the boundary defined by our Fe mask. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712598]
引用
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页数:4
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