Piezoresponse force microscopy studies of nanoscale domain structures in ferroelectric thin film

被引:12
|
作者
Zeng, HR [1 ]
Yu, HF
Tang, XG
Chu, RQ
Li, GR
Yin, QR
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Guangdong Univ Technol, Fac Appl Phys, Guangzhou 510090, Peoples R China
关键词
scanning force microscope; nanoscale domain; nanoscale displacement; ferroelectric thin film;
D O I
10.1016/j.mseb.2005.02.021
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Piezoresponse force microscopy was used to perform studies of nanoscale domain imaging, limit of ferroelectric nano-sized grains and electric field-induced displacement behavior of domain structures in ferroelectric PZT thin film. Nanoscale 180 degrees and 90 degrees domain configurations as small as 30 nm in size were clearly visualized in the individual grains. It was demonstrated that domain configuration was strongly dependent on the size of the grains. The limit of ferroelectric nano-sized grains was found to be smaller than 25 nm. Nanoscale displacement versus field hysteresis loops were obtained in ferroelectric domains of PZT thin film, and discussed in terms of phenomenological theory. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:104 / 108
页数:5
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