Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes

被引：16
|
作者：
Yang, J. [1 ]
Zhao, D. G. [1 ]
Jiang, D. S. [1 ]
Chen, P. [1 ]
Liu, Z. S. [1 ]
Zhu, J. J. [1 ]
Li, X. J. [1 ]
He, X. G. [1 ]
Liu, J. P. [2 ]
Zhang, L. Q. [2 ]
Yang, H. [1 ,2 ]
Zhang, Y. T. [3 ]
Du, G. T. [3 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China
[3] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
来源：
OPTICS EXPRESS | 2016年 / 24卷 / 13期
基金：
中国国家自然科学基金;
关键词：
OPTICAL-PROPERTIES; PRESSURE;
D O I：
10.1364/OE.24.013824
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A series of samples with varying growth pressure are grown and their optical and structural properties are investigated. It is found that the residual carbon concentration decreases when the reactor pressure increases from 80 to 450 Torr during the InGaN/GaN multiple quantum well growth. It results in an enhanced peak intensity of electroluminescence because carbon impurities can induce deep energy levels and act as non-radiative recombination centers in InGaN layers. (C) 2016 Optical Society of America
引用
收藏
页码：13824 / 13831
页数：8
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