Process-Variation-Aware Rule-Based Optical Proximity Correction for Analog Layout Migration

被引：13

作者：

Dong, Xuan ^{[1
]}

Zhang, Lihong ^{[1
]}

机构：

[1] Mem Univ Newfoundland, Fac Engn & Appl Sci, Dept Elect & Comp Engn, St John, NF A1B 3X5, Canada

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2017年 / 36卷 / 08期

基金：

加拿大自然科学与工程研究理事会; 加拿大创新基金会;

关键词：

Analog layout migration; optical proximity correction (OPC); process variation (PV); rule-based OPC (RB-OPC); OPTIMIZATION; OPC;

D O I：

10.1109/TCAD.2016.2626437

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Optical proximity correction (OPC) is invaluable to precise layout manufacturing in the advanced nanometer technologies. However, lack of research activity on OPC for analog integrated circuits has currently led to sole dependence on digital solutions. In this paper, we propose a rule-based OPC (RB-OPC) methodology with process variation (PV) consideration, which is integrated into an analog layout migration process. Based on the unique features of analog layouts, the accuracy limitation of RB-OPC is compensated by local wire widening and wire shifting operations during layout migration. Moreover, innovative PV-band shifting is deployed to preserve analog circuit performance against PV. According to our experimental results, the proposed analog layout migration with PV-aware RB-OPC can achieve much higher efficiency with an even lower mask complexity and an acceptable edge placement error compared to some well-known commercial and academic digital solutions. The circuit performance by using our proposed methodology is also better than that from alternative methods in the mismatch scenarios due to our special PV-band handling on transistor gates.

引用

页码：1395 / 1405

页数：11