Pulse-regime single-mode operation of antiwaveguide Photonic-Crystal 1300 nm VCSEL

被引：0
|
作者：
Czyszanowski, Tomasz [1 ]
Sarzala, Robert P. [1 ]
Dems, Maciej [1 ]
Wasiak, Michal [1 ]
Nakwaski, Wlodzimierz [1 ]
Panajotov, Krassimir [2 ]
机构：
[1] Tech Univ Lodz, Inst Phys, Ul Wolczanska 219, PL-90924 Lodz, Poland
[2] Vrije Univ Brussel, Dept Appl Phys & Photon, B-1050 Brussels, Belgium
来源：
SEMICONDUCTOR LASERS AND LASER DYNAMICS IV | 2010年 / 7720卷
关键词：
Photonic-Crystal; Vertical-Cavity Surface-Emitting Laser; AlInGaAs light emitter; numerical simulation; SURFACE-EMITTING LASERS; LOW-THRESHOLD; ALGAINAS; DISCRIMINATION; APERTURES; DESIGN; POWER;
D O I：
10.1117/12.854067
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A self-consistent pulse-operation model of an InP-based 1300-nm AlInGaAs vertical-cavity surface-emitting diode laser with filled-photonic-crystal is presented. It is shown that low threshold characteristics and strong transverse-mode discrimination can be simultaneously achieved for optimized photonic crystal structure for broad optical apertures.
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页数：9
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