'1x1' to (7x7) phase transition on Si(111) under heating current

被引：7
|
作者：
Hibino, H [1 ]
Homma, Y [1 ]
Ogino, T [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN
来源：
SURFACE SCIENCE | 1996年 / 364卷 / 02期
关键词：
low index single crystal surfaces; non-equilibrium thermodynamics and statistical mechanics; scanning electron microscopy; semiconducting surfaces; silicon; surface thermodynamics;
D O I：
10.1016/0039-6028(96)00773-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We investigated the influence of heating current on the phase transition of the (7 x 7) reconstruction on a Si(lll) surface using ultra-high vacuum scanning electron microscopy. Just below the phase transition temperature, the (7 x 7) reconstruction nucleates at the upper edges of the steps, and the (7 x 7) phase coexists with the '1 x 1' phase on the terrace. In this situation, the size of the (7 x 7) phase depends on the direction of the heating current, and the (7 x 7) phase is larger under the step-up current than under the step-down current. This dependence can be explained assuming that adatoms in the '1 x 1' phase are forced to move in the same direction as the current.
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页码：L587 / L590
页数：4
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