Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs

被引：22
|
作者：
de Oliveira, Alberto V. [1 ]
Veloso, Anabela [2 ]
Claeys, Cor [3 ]
Horiguchi, Naoto [2 ]
Simoen, Eddy [2 ]
机构：
[1] Univ Tecnol Fed Parana UTFPR, Dept Elect Engn, BR-85902490 Toledo, Brazil
[2] IMEC, B-3001 Heverlee, Belgium
[3] Katholieke Univ Leuven KU Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium
来源：
IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 03期
关键词：
Carrier number fluctuations; flicker noise; gate-all-around; silicon device; input-referred voltage power spectral density; low-frequency-noise; n-channel; oxide trap density; power spectral density; NANOWIRE TRANSISTORS; 1/F NOISE; ORIENTATION; DENSITY; IMPACT; METAL;
D O I：
10.1109/LED.2020.2968093
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This manuscript presents a systematic low-frequency noise analysis of inversion-mode vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due to carrier number fluctuations is shown as the dominant noise source, which is in line with previous reported studies on gate-all-around (GAA) nanowire nMOSFETs. In addition, the benchmark points out that the vertical stacking approach does not deteriorate the oxide trap density, since its normalized input-referred voltage noise Power Spectral Density at flat-band is lower compared to the data on non-stacked horizontal nanowire nMOSFETs. Another finding is that the Coulomb scattering mechanism dominates the mobility.
引用
收藏
页码：317 / 320
页数：4
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