Large non-volatile modulation of perpendicular magnetic anisotropy in Pb (Zr0.2Ti0.8) O3/SrRuO3

被引:0
|
作者
Liu, Pengfei [1 ]
Miao, Jun [2 ]
Liu, Qi [3 ]
Xu, Zedong [4 ]
Wu, Yong [2 ]
Meng, Kangkang [2 ]
Xu, Xiaoguang [2 ]
Jiang, Yong [2 ,4 ]
机构
[1] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
[2] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
[3] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
[4] Tiangong Univ, Sch Elect & Informat Engn, Tianjin 300387, Peoples R China
基金
中国国家自然科学基金; 北京市自然科学基金; 美国国家科学基金会;
关键词
SrRuO3; Perpendicular magnetic anisotropy; Large non-volatile modulation; TRANSPORT; REVERSAL; FILMS;
D O I
10.1016/j.cplett.2022.139797
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Non-volatile control of the magnetic properties via ferroelectric polarization underpins many spintronic proposals into applied devices. How to manipulate the perpendicular magnetic anisotropy (PMA) in the ferroelectric/ferromagnetic-oxide heterostructure is still an interesting issue. Here, a Pb(Zr0.2Ti0.8)O-3 (PZT)/SrRuO3 (SRO) multiferroic heterostructure is prepared for realizing the modulation of PMA. Interestingly, a large non-volatile modulation of PMA can be realized with opposite polarization fields in PZT. These changes can be attributed to the migration of oxygen vacancies in the interface of PZT/SRO. Our results pave a way for realizing the large non-volatile modulation in SRO-based spintronic devices.
引用
收藏
页数:5
相关论文
共 50 条
  • [41] Charge transfer and band bending at Au/Pb(Zr0.2Ti0.8)O3 interfaces investigated by photoelectron spectroscopy
    Apostol, Nicoleta G.
    Stoflea, Laura E.
    Lungu, George A.
    Chirila, Cristina
    Trupina, Lucian
    Negrea, Raluca F.
    Ghica, Corneliu
    Pintilie, Lucian
    Teodorescu, Cristian M.
    APPLIED SURFACE SCIENCE, 2013, 273 : 415 - 425
  • [42] Local 90° switching in Pb(Zr0.2Ti0.8)O3 thin film: Phase-field modeling
    Hong, Zijian
    Britson, Jason
    Hu, Jia-Mian
    Chen, Long-Qing
    ACTA MATERIALIA, 2014, 73 : 75 - 82
  • [43] Low Fatigue in Epitaxial Pb(Zr0.2Ti0.8)O3 on Si Substrates with LaNiO3 Electrodes by RF Sputtering
    Chun Wang
    Mark H. Kryder
    Journal of Electronic Materials, 2009, 38 : 1921 - 1925
  • [44] Low Fatigue in Epitaxial Pb(Zr0.2Ti0.8)O3 on Si Substrates with LaNiO3 Electrodes by RF Sputtering
    Wang, Chun
    Kryder, Mark H.
    JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (09) : 1921 - 1925
  • [45] Enhanced photovoltaic efficiency and persisted photoresponse switchability in LaVO3/Pb(Zr0.2Ti0.8)O3 perovskite heterostructures
    Cheng, Shengliang
    Fan, Zhen
    Zhao, Lei
    Guo, Haizhong
    Zheng, Dongfeng
    Chen, Zoufei
    Guo, Min
    Jiang, Yue
    Wu, Sujuan
    Zhang, Zhang
    Gao, Jinwei
    Lu, Xubing
    Zhou, Guofu
    Gao, Xingsen
    Liu, Jun-Ming
    JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (40) : 12482 - 12490
  • [46] Investigation of Pt/Pb(Zr0.2Ti0.8)O3/Ti-Al-O/Si heterostructure as metal/ferroelectric/insulator/semiconductor
    Fu, Y. J.
    Fu, G. S.
    Li, M.
    Jia, D. M.
    Jia, Y. L.
    Liu, B. T.
    APPLIED PHYSICS LETTERS, 2014, 104 (04)
  • [47] Modeling of hybrid relaxor-ferroelectric Ba(Zr0.2Ti0.8)O3 ceramics
    Starkov, I. A.
    Suchaneck, G.
    Starkov, A. S.
    Gerlach, G.
    FERROELECTRICS, 2020, 556 (01) : 8 - 15
  • [48] Structural, electric and magnetic properties of Pb(Zr0.2Ti0.8)O3-CoFe2O4 heterostructures
    Chirila, C.
    Ibanescu, G.
    Hrib, L.
    Negrea, R.
    Pasuk, I.
    Kuncser, V.
    Pintilie, I.
    Pintilie, L.
    THIN SOLID FILMS, 2013, 545 : 2 - 7
  • [49] (Pb, La)(Zr, Ti)O3 film grain-boundary conduction with SrRuO3 top electrodes
    Cross, JS
    Tomotani, M
    Kotaka, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (4A): : L346 - L348
  • [50] Effect of Gamma Ray Irradiation on Epitaxial Pb(Zr,Ti)O3/SrRuO3 Tunable Varactor Devices
    Barala, Surendra Singh
    Banerjee, Nirupam
    Kumar, Mahesh
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (08) : 4122 - 4128