Water-Related Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors Caused by Self-Heating

被引：1

作者：

Tsuchiya, Toshiaki ^{[1
]}

Tsuboi, Shinzo ^{[2
]}

Kawachi, Genshiro ^{[2
]}

Matsumura, Masakiyo ^{[2
]}

机构：

[1] Shimane Univ, Interdisciplinary Fac Sci & Engn, Matsue, Shimane 6908504, Japan

[2] Adv LCD Technol Dev Ctr Co Ltd, Kawasaki, Kanagawa 2120013, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 03期

关键词：

DEGRADATION PHENOMENON; TFTS; OPERATION;

D O I：

10.1143/JJAP.50.03CB04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It was observed that the bias stressing of low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) gave rise to anomalous instabilities in device characteristics, such as negative threshold voltage shifts in both n- and p-channel TFTs, and the recovery of the shift even under stress. From detailed investigations of these phenomena, it was found that the instability is caused by self-heating due to the drain current, and is related to hydrogen and/or water diffusing into the gate oxide from the interlayer dielectric. It is considered that these phenomena will become more significant in future scaled TFTs; therefore, it is important that low-temperature processes taking account of water-related components are carefully introduced. (c) 2011 The Japan Society of Applied Physics

引用

页数：6

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