Silicon LEDs in FinFET technology

被引：0
|
作者：
Piccolo, G. [1 ]
Kuindersma, P. I. [3 ]
Ragnarsson, L-A [2 ]
Hueting, R. J. E. [1 ]
Collaert, N. [2 ]
Schmitz, J. [1 ]
机构：
[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
[2] IMEC, Leuven, Belgium
[3] NXP Semicond, Eindhoven, Netherlands
来源：
PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014) | 2014年
关键词：
Silicon; Silicon on insulator technology; Electro-luminescence; Elemental semiconductors; Light emitting diodes; p-i-n diodes; FinFETs; LED; Carrier injectors; Integrated optics; Near-infrared light emission; Infrared light sources; Silicon Photonics; Nanometric devices;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in finFET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.
引用
收藏
页码：274 / 277
页数：4
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