Frequency Conversion Layers for Si Solar Cell Efficiency Improvement

被引：0

作者：

Gourbilleau, Fabrice ^{[1
]}

Dumont, Lucile ^{[1
]}

Cardin, Julien ^{[1
]}

Gouesmel, Anais ^{[1
]}

Yu, Ing-Song ^{[2
]}

Labbe, Christophe ^{[1
]}

Merabet, Hocine ^{[3
]}

机构：

[1] Normandie Univ, CIMAP, ENSICAEN, UNICAEN,CEA,CNRS, F-14000 Caen, France

[2] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Hualien, Taiwan

[3] Qatar Univ, Dept Math Stat & Phys, Coll Arts & Sci, Doha, Qatar

来源：

FRONTIERS IN ELECTRONIC TECHNOLOGIES: TRENDS AND CHALLENGES | 2017年 / 433卷

关键词：

Si solar cell; Frequency conversion; Down conversion; Down shifting; Silicon nitride; Alumina; DOWN-CONVERSION; SILICON; PERFORMANCE; SPECTRUM;

D O I：

10.1007/978-981-10-4235-5_5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiNx and SiNx: Tb3+ thin layers deposited by reactive magnetron co-sputtering have been studied with the aim of optimizing the light management in Si solar cells. Those Si-based layers are developed to be compatible with the Si-PV technology. An efficient energy transfer between matrix and terbium ions has been demonstrated and optimized. The layer composition and microstructure as well as its optical properties have been analyzed to favor the required optical properties for achieving a good solar cell, i.e., good anti-reflective properties and high luminescence emission intensity. Finally a Tb-doped SiNx thin film has been deposited on the top of a Si solar cells and solar cell characteristics studied.

引用

页码：85 / 91

页数：7

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