Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy

被引：68
|
作者：
Jeong, MS
Kim, JY
Kim, YW
White, JO
Suh, EK [1 ]
Hong, CH
Lee, HJ
机构：
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[3] Chonbuk Natl Univ, Sch Sci & Technol, Chonju 561756, South Korea
[4] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 07期
关键词：
D O I：
10.1063/1.1391227
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Spatially and spectrally resolved photoluminescence (PL) from InGaN/GaN quantum wells is obtained using near-field scanning optical microscopy (NSOM). Samples displaying high macroscopic PL intensity revealed nonuniform intensity and linewidth but nearly uniform peak position. It suggests that the contrast in the NSOM image reflects nonuniform distribution of dislocations or defects which act as nonradiative recombination centers. The formation of quantum dots with size of 30 +/- 25 nm and their size-dependent interaction with dislocations were observed in plan-view transmission electron microscopy. It is likely that the high luminescence efficiency is due to the efficient localization of excitons in high-density quantum dots located in regions with fewer dislocations. (C) 2001 American Institute of Physics.
引用
收藏
页码：976 / 978
页数：3
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