Growth of InSb thin films on GaAs(100) substrates by flash evaporation epitaxy

被引：10

作者：

Szwadowski, M ^{[1
]}

Berus, T ^{[1
]}

Borowska, A ^{[1
]}

Czajka, R ^{[1
]}

Zimniak, M ^{[1
]}

机构：

[1] Politechn Poznanska, Inst Fizyki, PL-60965 Poznan, Poland

来源：

E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS | 2004年 / 1卷 / 02期

关键词：

D O I：

10.1002/pssc.200303943

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A two-stage flash-evaporation epitaxy of InSb thin films on GaAs(100) substrates is developed. In the first, low temperature stage, a buffer layer of thickness of about 20 nm is deposited. In the second, high temperature stage the bulk of the film is deposited. Thus obtained InSb films have good structural and electrical properties, comparable with those obtained by MBE. They can be used for practical applications, e.g. for Hall sensors. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：351 / 354

页数：4

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