InP-based HFET's and RTD's for high speed digital circuitry

被引：1

作者：

Prost, W ^{[1
]}

Auer, U ^{[1
]}

Pacha, C ^{[1
]}

Brennemann, A ^{[1
]}

Janssen, G ^{[1
]}

Bertenburg, RM ^{[1
]}

Brockerhoff, W ^{[1
]}

Bushehri, E ^{[1
]}

Goser, KF ^{[1
]}

Tegude, FJ ^{[1
]}

机构：

[1] Univ Duisburg Gesamthsch, Dept Solid State Elect, D-4100 Duisburg, Germany

来源：

1998 URSI SYMPOSIUM ON SIGNALS, SYSTEMS, AND ELECTR ONICS | 1998年

关键词：

D O I：

10.1109/ISSSE.1998.738034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InP-based HFET technology for monolithically integrated high speed digital circuits is described. A novel logic gate configuration is presented based on depletion mode HFET's using a non-linear negative feedback for high speed operation. A possible implementation of enhancement mode transistors and the promising combination with a low-peak voltage RTD is also presented. A preliminary investigation on manufacturability of RTD is given. We report on the realisation of RTD/E-HFET on InP as a building block for digital circuits and its applicability to a novel circuit architecture (multiple input threshold logic).

引用

页码：45 / 49

页数：5

共 50 条

[31] InP-Based 100 Gb/s Coherent Receiver Technologies
Yagi, Hideki
Yoneda, Yoshihiro
Takechi, Masaru
Shoji, Hajime
2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2014,
[32] Delay time analysis of submicron InP-based HEMT's
Kwon, Y
Pavlidis, D
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (02) : 228 - 237
[33] A varactor-tuned MMIC VCO using InP-based RTD/HBT technology
Choi, S
Lee, B
Kim, T
Yang, K
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2005, 45 (05) : 408 - 411
[34] Monolithically integrated InP-based minority logic gate using an RTD/HBT heterostructure
Lin, CH
Yang, K
Bhattacharya, M
Wang, X
Zhang, X
East, JR
Mazumder, P
Haddad, GI
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 419 - 422
[35] State-of-the-art performance of InP-based MMIC's
Wang, H
1997 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS I-III, 1997, : 541 - 544
[36] An HSPICE HBT model for InP-based single HBT's
Yang, K
GutierrezAitken, AL
Zhang, X
Batthacharya, P
Haddad, GI
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) : 1470 - 1472
[37] High-speed InGaAs/InP-based single-photon detector with high efficiency
Xu, Lilin
Wu, E.
Gu, Xiaorong
Jian, Yi
Wu, Guang
Zeng, Heping
APPLIED PHYSICS LETTERS, 2009, 94 (16)
[38] Fabrication technologies of InP-based digital ICs and MMICs
Ishii, Y
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 53 - 56
[39] High-Speed InP-Based Quantum Dot Lasers With Low Temperature Sensitivity
Eyal, O.
Eisenstein, G.
Banyoudeh, S.
Abdollahinia, A.
Schnabel, F.
Reithmaier, J. P.
2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2016,
[40] High-speed InP-Based Mach-Zehnder modulators for telecom applications
Yasaka, H
Tsuzuki, K
Kikuchi, N
Yamada, E
Shibata, Y
Ishibashi, T
2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST, 2005, : 25 - 28

← 1 2 3 4 5 →