Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon

被引：2
|
作者：
Park, SJ [1 ]
Lee, HB [1 ]
Shan, WL [1 ]
Chua, SJ [1 ]
Lee, JH [1 ]
Hahm, SH [1 ]
机构：
[1] Kyungpook Natl Univ, Sch Elect & Comp Engn, Taejon, South Korea
来源：
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | 2005年 / 2卷 / 07期
关键词：
D O I：
10.1002/pssc.200461393
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The planar Schottky diodes were fabricated, characterized and modelled to study the electrical characteristics or cracked GaN epitaxial layer on (111) silicon substrate. We deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact resistivity was 5.51 x 10 Omega(-5/.)cm(2) after annealing in N-2 ambient at 700 degrees C for 30 s. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideal factor was 2.4. We got the cutoff wavelength at 360 nm, peak responsivity of 0.097 A/W at 300nm, and UV/visible rejection ratio was about 10(4). The SPICE simulation with the circuit model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.
引用
收藏
页码：2559 / 2563
页数：5
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