Synthesis and characterization of Cu2ZnSnS4 thin films grown by PLD: Solar cells

被引:99
|
作者
Moholkar, A. V. [1 ,2 ]
Shinde, S. S. [1 ]
Babar, A. R. [1 ]
Sim, Kyu-Ung [2 ]
Lee, Hyun Kee [2 ]
Rajpure, K. Y. [1 ]
Patil, P. S. [3 ]
Bhosale, C. H. [1 ]
Kim, J. H. [2 ]
机构
[1] Shivaji Univ, Dept Phys, Electrochem Mat Lab, Kolhapur 416004, Maharashtra, India
[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea
[3] Shivaji Univ, Dept Phys, Thin Film Lab, Kolhapur 416004, Maharashtra, India
关键词
CZTS; PLD; Structural; XPS; Optical properties; Device; PULSED-LASER DEPOSITION; OPTICAL-PROPERTIES; SULFURIZATION; THICKNESS; LAYERS; OXIDE;
D O I
10.1016/j.jallcom.2011.04.074
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
As-deposited and annealed Cu2ZnSnS4 (CZTS) thin films have been synthesized onto Mo coated glass substrates at different deposition times using pulsed laser deposition (PLD) technique. The effect of deposition time (film thickness) and annealing onto the structural, morphological, compositional and optical properties of CZTS thin films have been investigated. The polycrystalline CZTS thin films with tetragonal crystal structure have been observed from structural analysis. FESEM and AFM images show the smooth, uniform, homogeneous and densely packed grains and increase in the grain size after annealing. The internal quantitative analysis has been carried out by XPS study which confirms the stoichiometry of the films. The optical band gap of CZTS films grown by PLD is about 1.54 eV, which suggests that CZTS films can be useful as an absorber layer in thin film solar cells. Device performance for deposited CZTS films has been studied. (C) 2011 Elsevier B.V. All rights reserved.
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页码:7439 / 7446
页数:8
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