Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

被引：26

作者：

Lanza, Mario ^{[1
]}

Iglesias, Vanessa ^{[1
]}

Porti, Marc ^{[1
]}

Nafria, Montse ^{[1
]}

Aymerich, Xavier ^{[1
]}

机构：

[1] Dept Eng Elect, Bellaterra 08193, Spain

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

CURRENT LIMITED STRESSES; ATOMIC-FORCE MICROSCOPY; THIN SIO2-FILMS; GATE OXIDES; BREAKDOWN; SIO2; CRYSTALLIZATION; DIFFUSION;

D O I：

10.1186/1556-276X-6-108

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed.

引用

页数：9

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