Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

被引：26
|
作者：
Lanza, Mario [1 ]
Iglesias, Vanessa [1 ]
Porti, Marc [1 ]
Nafria, Montse [1 ]
Aymerich, Xavier [1 ]
机构：
[1] Dept Eng Elect, Bellaterra 08193, Spain
来源：
NANOSCALE RESEARCH LETTERS | 2011年 / 6卷
关键词：
CURRENT LIMITED STRESSES; ATOMIC-FORCE MICROSCOPY; THIN SIO2-FILMS; GATE OXIDES; BREAKDOWN; SIO2; CRYSTALLIZATION; DIFFUSION;
D O I：
10.1186/1556-276X-6-108
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed.
引用
收藏
页数：9
相关论文
共 50 条
  • [1] Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics
    Mario Lanza
    Vanessa Iglesias
    Marc Porti
    Montse Nafria
    Xavier Aymerich
    Nanoscale Research Letters, 6
  • [2] Effects of nitrogen content on the structure and electrical properties of high-k NdOxNy gate dielectrics
    Pan, Tung-Ming
    Hou, Sung-Ju
    Wang, Chih-Hwa
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (12)
  • [3] Electrical characterization of high-k gate dielectrics
    Ma, TP
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 361 - 365
  • [4] Structural and electrical properties of neodymium oxide high-k gate dielectrics
    Pan, Tung-Ming
    Lee, Jian-Der
    Shu, Wei-Hao
    Chen, Tsung-Te
    APPLIED PHYSICS LETTERS, 2006, 89 (23)
  • [5] Structural and Electrical Properties of High-k HoTiO3 Gate Dielectrics
    Pan, Tung-Ming
    Yen, Li-Chen
    Hu, Chia-Wei
    Chao, Tien-Sheng
    ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2010, 28 (01): : 241 - 245
  • [6] Electrical characterization of high-k gate dielectrics on semiconductors
    Ma, T. P.
    APPLIED SURFACE SCIENCE, 2008, 255 (03) : 672 - 675
  • [7] Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs
    Vogel, Eric M.
    Sonnet, A. M.
    Galatage, R. V.
    Milojevic, M.
    Hinkle, C. L.
    Wallace, R. M.
    ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2010, 28 (01): : 209 - 219
  • [8] Effect of postdeposition annealing on the interfacial and electrical properties of high-k NdOxNy gate dielectrics
    Pan, Tung-Ming
    Hou, Sung-Ju
    APPLIED PHYSICS LETTERS, 2008, 92 (07)
  • [9] Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
    Huang, Jhih-Jie
    Tsai, Yi-Jen
    Tsai, Meng-Chen
    Huang, Li-Tien
    Lee, Min-Hung
    Chen, Miin-Jang
    APPLIED SURFACE SCIENCE, 2015, 324 : 662 - 668
  • [10] Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics
    Hsieh, Chih-Ren
    Chen, Yung-Yu
    Lu, Kwung-Wen
    Lin, Gray
    Lou, Jen-Chung
    MICROELECTRONIC ENGINEERING, 2011, 88 (06) : 945 - 949
12345