Isotopic analysis of 28Si-Enriched silicon using laser mass spectrometry

被引：6

作者：

Kovalev, ID ^{[1
]}

Malyshev, KN ^{[1
]}

Potapov, AM ^{[1
]}

Suchkov, AI ^{[1
]}

机构：

[1] Russian Acad Sci, Inst High Pur Subst, Nizhnii Novgorod 603600, Russia

来源：

JOURNAL OF ANALYTICAL CHEMISTRY | 2001年 / 56卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

Silicon; Analytical Chemistry; Mass Spectrometry; Enrichment Factor; Isotopic Analysis;

D O I：

10.1023/A:1016674919374

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A procedure for the isotopic analysis of Si-28-enriched silicon by laser mass spectrometry is described. The procedure is based on the analysis of a dry concentrate or a film obtained by the pneumatic nebulization of an analyte and an internal standard solution or by the laser sputtering of a solid phase onto a support of a high-purity substance. The range of determinable isotope concentrations is (100-n x 10(-6)) at %; the total error in determining the major isotope is n x 10(-2) at % at an enrichment factor higher than 99%. The procedure provides the simultaneous control of 70 impurity elements in the sample.

引用

页码：437 / 442

页数：6

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