Photoelectron spectroscopy investigation of high-K dielectrics

被引：0
|
作者：
Demirkan, K [1 ]
Mathew, A [1 ]
Opila, RL [1 ]
机构：
[1] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
来源：
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II | 2004年 / 2003卷 / 22期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
X-ray photoelectron spectroscopy is a powerful tool for the analysis of candidate dielectrics for future gate applications. The second neighbor shift in the binding energies of the metallic and silicon components in silicate films reflects the bonding throughout the film, and presumably can confirm the composition (also present as the photoelectron intensity) and the occurrence of phase segregation. In addition, because the photoelectrons are charged their energy distribution is an excellent probe of fixed charge at the interface. By careful choice of the model, the actual charge at the interface can be determined.
引用
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页码：299 / 306
页数：8
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