Photoelectron spectroscopy investigation of high-K dielectrics

X-ray photoelectron spectroscopy is a powerful tool for the analysis of candidate dielectrics for future gate applications. The second neighbor shift in the binding energies of the metallic and silicon components in silicate films reflects the bonding throughout the film, and presumably can confirm the composition (also present as the photoelectron intensity) and the occurrence of phase segregation. In addition, because the photoelectrons are charged their energy distribution is an excellent probe of fixed charge at the interface. By careful choice of the model, the actual charge at the interface can be determined.