Smart society is forthcoming with a rapid development in the automation of electric appliances requiring abundant sensors. One of the key sensors is a three-dimensional magnetometer for detecting the motion of objects, which is usually driven by cooperative multiple sensors on three orthogonal planes. Here, we demonstrate the fundamental operation of a three-dimensional magnetometer based on a simple Fe-Sn heterostructure Hall device in a planar geometry. Polar coordinates of the magnetic-field vector are uniquely determined by the combination of the sizable anomalous Hall effect, the anisotropic magnetoresistance, and the unidirectional magnetoresistance. Thanks to the ferromagnetic topological features in the Fe-Sn heterostructure, the above-mentioned device overcomes the limitation of conventional semiconductor devices and is highly sensitive even at room temperature. The compact planar geometry will be particularly useful in versatile electrical applications requiring a low-cost three-dimensional magnetometer with space- and energy-saving features. Three-dimensional magnetometers are key for detecting the motion of objects in automated electronics, but typically require multiple sensors on orthogonal planes. Here, a compact planar-type 3D magnetometer with low power consumption is realized using a topological ferromagnetic Fe-Sn heterostructure.
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Univ Estado Rio de Janeiro, IME, Dept Matemat Aplicada, Rua Sao Francisco Xavier 524, BR-20550013 Rio De Janeiro, RJ, BrazilUniv Estado Rio de Janeiro, IME, Dept Matemat Aplicada, Rua Sao Francisco Xavier 524, BR-20550013 Rio De Janeiro, RJ, Brazil
Arenas, Zochil Gonzalez
Barci, Daniel G.
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Univ Estado Rio de Janeiro, Dept Fis Teor, Rua Sao Francisco Xavier 524, BR-20550013 Rio De Janeiro, RJ, BrazilUniv Estado Rio de Janeiro, IME, Dept Matemat Aplicada, Rua Sao Francisco Xavier 524, BR-20550013 Rio De Janeiro, RJ, Brazil
Barci, Daniel G.
Moreno, Miguel Vera
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Univ Estado Rio de Janeiro, Dept Fis Teor, Rua Sao Francisco Xavier 524, BR-20550013 Rio De Janeiro, RJ, BrazilUniv Estado Rio de Janeiro, IME, Dept Matemat Aplicada, Rua Sao Francisco Xavier 524, BR-20550013 Rio De Janeiro, RJ, Brazil
机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Univ Hong Kong, Ctr Computat & Theoret Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Zhang, Yan-Yang
Wang, Xiang-Rong
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Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Shandong Univ, Sch Phys, Jinan 250100, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Wang, Xiang-Rong
Xie, X. C.
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Peking Univ, Int Ctr Quantum Mat, Beijing 100083, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China