Demonstration of distributed bragg reflectors for deep ultraviolet applications

被引：13

作者：

Getty, Amorette R. K. ^{[1
]}

David, Aurelien ^{[1
]}

Wu, Yuan ^{[1
]}

Weisbuch, Claude ^{[1
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 29-32期

关键词：

distributed Bragg reflector; aluminum gallium nitride; III-nitrides; semiconductors; reflectors; optical devices; ultraviolet;

D O I：

10.1143/JJAP.46.L767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN/AlGaN distributed Bragg reflectors (DBRs) have been developed for potential use in deep-UV light emitting diodes (LEDs) and exceed the performance of all previously reported nitride DBRs for deep-UV wavelengths. The DBRs were grown on 4H-SiC by plasma-assisted molecular beam epitaxy. All layers had Al content exceeding 50% thus minimizing light absorption within the structure. DBRs are demonstrated with 19.5 periods to be 80% reflective at 254 and 280 nm, with clear routes for improvement.

引用

页码：L767 / L769

页数：3

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