RF modeling and parameter extraction for GaAs-based on-chip inductors

RF modeling and equivalent circuit model parameter extraction for GaAs-based on-chip inductors are presented in this article. An improved model that takes into account of the substrate loss effects based on the S parameters on wafer measurement is proposed. The parameter extraction method combines the analytical expressions and the empirical optimization procedure, which does not require any additional test structures. The intrinsic elements determined by utilizing the analytical method are described as functions of the parasitic elements. After that, an advanced design system is used to optimize the parasitic parameters with very small dispersion of initial values. Good agreement is obtained between the simulated and measured data up to 50 GHz.