Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions

In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. Complementary metal oxide semiconductor-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices with thicknesses around approximate to 4-6 nm, the relatively high tunnel energy barrier produces a large resistance that challenges their implementation. Here, we show that ferroelectric and electroresistive switching can be observed in ultrathin 2 nm epitaxial Hf0.5Zr0.5O2 (HZO) tunnel junctions in large area capacitors (approximate to 300 mu m(2)). We observe that the resistance area product is reduced to about 160 and 65 Omega.cm(2) for OFF and ON resistance states, respectively. These values are 2 orders of magnitude smaller than those obtained in equivalent 5 nm HZO tunnel devices while preserving a similar OFF/ON resistance ratio (210%). The devices show memristive and spike-timing-dependent plasticity behavior and good retention. Electroresistance and ferroelectric loops closely coincide, signaling ferroelectric switching as a driving mechanism for resistance change.