MOMBE growth of III-V-N-based quantum wells and quantum dots emitting above 1.3μm

被引：0
|
作者：
Suemune, I [1 ]
Uesugi, K [1 ]
Sasikala, G [1 ]
Kurimoto, A [1 ]
Zhou, W [1 ]
Thilakan, P [1 ]
机构：
[1] Hokkaido Univ, Res Inst Elect Sci, Kita Ku, Sapporo, Hokkaido 0600812, Japan
来源：
2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2003年
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：943 / 944
页数：2
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