Parametric analysis of the extraction of depth profile information from ARXPS data obtained on a silicon wafer sample

被引：10

作者：

Paynter, RW

Nolet, D

机构：

[1] INRS EMT, Varennes, PQ J3X 1S2, Canada

[2] Univ Quebec, Dept Phys, Trois Rivieres, PQ G9A 5H7, Canada

来源：

SURFACE AND INTERFACE ANALYSIS | 2003年 / 35卷 / 12期

关键词：

ARXPS; error surface; silicon; depth profile model; oxide thickness;

D O I：

10.1002/sia.1630

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study a silicon wafer was analysed by angle-resolved x-ray photoelectron spectroscopy and the data compared with a calculation based upon a simple model of the sample surface. The parameters in the mathematical model were varied in groups of three and the sum-squared difference between the calculation and the experimental results was plotted as an error surface. Most of the error surfaces were found to exhibit a well-constrained minimum, indicating an optimum set of values for the parameters in question, but important examples of co-dependency were also noted. Copyright (C) 2003 John Wiley Sons, Ltd.

引用

页码：960 / 967

页数：8