Room temperature ferromagnetism in sputtered Zn1-xCrxO thin films

被引：9
|
作者：
Pang, Xiaolu [1 ]
Zhang, Jianlun [1 ]
Gao, Kewei [1 ]
Volinsky, Alex A. [2 ]
机构：
[1] Univ Sci & Technol Beijing, Dept Mat Phys, Beijing 100083, Peoples R China
[2] Univ S Florida, Dept Mech Engn, Tampa, FL 33620 USA
来源：
MATERIALS LETTERS | 2011年 / 65卷 / 17-18期
基金：
美国国家科学基金会;
关键词：
ZnO; Ferromagnetism; Curie temperature; XRD; DOPED ZNO FILMS; MAGNETIC SEMICONDUCTORS;
D O I：
10.1016/j.matlet.2011.05.074
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cr doped ZnO (Zn1-xCrxO) thin films with different Cr concentrations (0.4, 1.5, and 8.9 at.%) were deposited on Si substrates using RF magnetron sputtering. Film crystal structure was characterized using X-ray diffraction, and vibrating sample magnetometer measurements were used to investigate their magnetic properties. Unstable ZnO structure is present at low Cr concentrations, while secondary phases appear at higher Cr concentrations. 8.9 at.% Zn1-xCrxO film exhibits room temperature ferromagnetism and high 325 K Curie temperature, even after 300 degrees C annealing for 1 h. This result is promising and demonstrates Cr doped ZnO film's potential use in practical applications. Published by Elsevier B.V.
引用
收藏
页码：2728 / 2730
页数：3
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