Fast thermal nanoimprint lithography by a stamp with integrated heater

被引：22

作者：

Tormen, Massimo ^{[1
]}

Malureanu, Radu ^{[1
]}

Pedersen, Rasmus Haugstrup ^{[2
]}

Lorenzen, Lasse ^{[2
]}

Rasmussen, Kristian Hagsted ^{[2
]}

Luscher, Christopher James ^{[2
]}

Kristensen, Anders ^{[2
]}

Hansen, Ole ^{[2
,3
]}

机构：

[1] Natl Inst Phys Matter, TASC Lab, I-34012 Basovizza Trieste, Italy

[2] Tech Univ Denmark, MIC Dept Micro & Nanotechnol, DK-2800 Lyngby, Denmark

[3] Tech Univ Denmark, CINF, DK-2800 Lyngby, Denmark

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 5-6期

关键词：

nanoimprint lithography; stamps; integrated heater; Joule effect;

D O I：

10.1016/j.mee.2008.01.065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose fast nanoimprinting lithography (NIL) process based on the use of stamps with integrated heater. The latter consists of heavily ion implantation n-type doped silicon layer buried below the microstructured surface of the stamp. The stamp is heated by Joule effect, by 50 mu s 25 Hz repetition rate current pulses flowing in the conductive layer. Using this approach we have reproducibly imprinted areas of similar to 2 cm(2) within 16 s with residual layers in the range of few tens of nm. This result paves the way for processes in the sub-1 s timescale over large area surfaces. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1229 / 1232

页数：4

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