Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications

被引：10
|
作者：
Jacobs, K. J. P. [1 ]
Stevens, B. J. [1 ]
Baba, R. [2 ]
Wada, O. [1 ]
Mukai, T. [3 ]
Hogg, R. A. [2 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S3 7HQ, S Yorkshire, England
[2] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland
[3] ROHM Co Ltd, LED Mfg Div, Kyoto 6158585, Japan
来源：
AIP ADVANCES | 2017年 / 7卷 / 10期
基金：
英国工程与自然科学研究理事会;
关键词：
INTERFACE-ROUGHNESS SCATTERING; CURRENT-VOLTAGE CHARACTERISTICS; TEMPERATURE; DC;
D O I：
10.1063/1.4997664
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report valley current characterisation of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTDs) grown by metal-organic vapour phase epitaxy (MOVPE) for THz emission, with a view to investigate the origin of the valley current and optimize device performance. By applying a dual-pass fabrication technique, we are able to measure the RTD I-V characteristic for different perimeter/area ratios, which uniquely allows us to investigate the contribution of leakage current to the valley current and its effect on the PVCR from a single device. Temperature dependent (20 - 300 K) characteristics for a device are critically analysed and the effect of temperature on the maximum extractable power (P-MAX) and the negative differential conductance (NDC) of the device is investigated. By performing theoretical modelling, we are able to explore the effect of typical variations in structural composition during the growth process on the tunnelling properties of the device, and hence the device performance. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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页数：8
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