GISAXS study of the alignment of oriented carbon nanotubes grown on plain SiO2/Si(100) substrates by a catalytically enhanced CVD process

被引:8
|
作者
Mane, J. Mane [1 ]
Cojocaru, C. S. [1 ]
Barbier, A. [2 ]
Deville, J. P. [1 ]
Sendja, B. Thiodjio [1 ]
Le Normand, F. [1 ]
机构
[1] IPCMS, CNRS, UMR 7504, F-67034 Strasbourg, France
[2] CEA Saclay, DSM, DRECAM, SPCI, F-91191 Gif Sur Yvette, France
关键词
D O I
10.1002/pssa.200723201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a quantitative Grazing Incidence Small Angle X-Ray Scattering (GISAXS) study of the alignment of mutually oriented carbon nanotubes (CNTs) grown by a catalytically-activated, a plasma direct current and hot filaments-assisted (DC HF CCVD) process. Metallic catalytic (Co) islands were dispersed on plain SiO2 (5 nm thickness)/Si(100) substrates prior the growth of CNTs which can be considered as highly anisotropic 1D nanostructures. The GISAXS pattern analysis in the framework of the Distorted-Wave Born Approximation (DWBA) has been expanded to multilayered non-correlated surface science systems (non-correlated carbon nanotubes) and is based on the determination of carbon nanotubes density, characteristic lengths, atomic Co dispersion throughout the CNTs and roughnesses of the uncorrelated particles. Even dominated by envelope features of disordered objects, they provide noticeable information about CNTs films: both structural (orientation, size and length distribution) and correlation (density, mutual alignment) information. The results stand in rather good agreement with the Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) observations. Moreover, the GISAXS patterns could only be satisfactorily reproduced by adding a mixed C-Co contribution between the pure carbon and the metallic cobalt let on top of the CNT, inferring that cobalt continuously fills the nanotube in the course of the growth and that the CNTs experience a large tendency toward mutual alignment. The effect of variable X-ray incidence angles has been investigated. With a weak addition of ammonia (from 1% to 3% of the gas mixture) the density has been found to decrease by more than one order of magnitude. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:4209 / 4229
页数:21
相关论文
共 50 条
  • [41] Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates.
    Suvorova, NA
    Mueller, AH
    Suvorova, AA
    Saunders, M
    Irene, EA
    NOVEL MATERIALS AND PROCESSES FOR ADVANCED CMOS, 2003, 745 : 373 - 378
  • [42] Multiwavelength Raman Scattering Spectroscopy Study of Graphene Synthesized on Si(100) and SiO2 by Microwave Plasma-Enhanced Chemical Vapor Deposition
    Meskinis, Sarunas
    Gudaitis, Rimantas
    Vasiliauskas, Andrius
    Tamulevicius, Sigitas
    Niaura, Gediminas
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2020, 14 (02):
  • [43] Interference-Enhanced Broadband Absorption of Monolayer MoS2 on Sub-100 nm Thick SiO2/Si Substrates: Reflection and Transmission Phase Changes at Interfaces
    Kim, Eunah
    Cho, Jin-Woo
    Kim, Bo Ra
    Trang Thi Thu Nguyen
    Nam, Yoon-Ho
    Kim, Sun-Kyung
    Yoon, Seokhyun
    Kim, Yong Soo
    Lee, Jung-Ho
    Kim, Dong-Wook
    ADVANCED MATERIALS INTERFACES, 2018, 5 (12):
  • [44] Electrical properties of predominantly (100)-oriented of Ca2+ modified SrBi4Ti4O15 thin film deposited on Pt/Ti/SiO2/Si substrates
    Zhang, Fengqing
    Dong, Pengchao
    Fan, Suhua
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2015, 16 (05): : 511 - 514
  • [45] Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates
    Yoon, Tae-Sik
    Kim, Hyun-Mi
    Kim, Ki-Bum
    Ryu, Du Yeol
    Russell, Thomas P.
    Zhao, Zuoming
    Liu, Jian
    Xie, Ya-Hong
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (04): : 721 - 724
  • [46] Enhanced tunable properties of Ba0.6Sr0.4TiO3 thin films grown on Pt/Ti/SiO2/Si substrates using MgO buffer layers
    Zhu, Weicheng
    Cheng, Jinrong
    Yu, Shengwen
    Gong, Jia
    Meng, Zhongyan
    APPLIED PHYSICS LETTERS, 2007, 90 (03)
  • [47] Diffusion-enhanced preferential growth of m-oriented GaN micro-domains on directly grown graphene with a large domain size on Ti/SiO2/Si(001)
    Lee, Hyunkyu
    Park, Jong-Hyurk
    Maity, Nikhilesh
    Kim, Donghoi
    Jang, Dongsoo
    Kim, Chinkyo
    Yoon, Young-Gui
    Singh, Abhishek K.
    Han, Yire
    Yoon, Soon-Gil
    MATERIALS TODAY COMMUNICATIONS, 2022, 30
  • [48] Dielectric and piezoelectric properties of highly (100)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer
    Guo, YP
    Suzuki, K
    Nishizawa, K
    Miki, T
    Kato, K
    JOURNAL OF CRYSTAL GROWTH, 2005, 284 (1-2) : 190 - 196
  • [49] Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates
    Zhai, Jiwei
    Yao, Xi
    Xu, Zhengkui
    Chen, Haydn
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (03)
  • [50] Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates
    Zhai, Jiwei
    Yao, Xi
    Xu, Zhengkui
    Chen, Haydn
    Journal of Applied Physics, 2006, 100 (03):