Impact of NBTI/PBTI on SRAM Stability Degradation

被引：38

作者：

Cheng, Binjie ^{[1
]}

Brown, Andrew R. ^{[1
]}

Asenov, Asen ^{[1
,2
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Gold Standard Simulat Ltd, Glasgow G12 8LT, Lanark, Scotland

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

Reliability; SRAM; static noise margin (SNM); statistical variability (SV); write noise margin (WNM); STATISTICAL VARIABILITY;

D O I：

10.1109/LED.2011.2136316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the impact of negative-bias temperature instability (NBTI) on the degradation of the static noise margin (SNM) and write noise margin (WNM) of a SRAM cell. This is based on the quantitative simulation of the statistical impact of NBTI on p-MOSFETs corresponding to a 45-nm low-power technology generation. Due to the increasing importance of positive-bias temperature instability (PBTI) of n-MOSFETs with the introduction of high-kappa/metal gate stacks, we also explore the additional impact of PBTI on statistical SNM and WNM degradation behavior. The results indicate that NBTI-only induced SNM and WNM degradations follow different evolutionary patterns compared to the impact of simultaneous NBTI and PBTI degradation, and high distribution moment information is required for the reconstruction of noise margin distributions.

引用

页码：740 / 742

页数：3

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