Emission rates for electron tunneling from InAs quantum dots to GaAs substrate (vol 96, pg 6477, 2004) -: art. no. 059901

被引：1
|
作者：
Fu, Y [1 ]
Engström, O
Luo, Y
机构：
[1] Chalmers Univ Technol, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden
[2] Royal Inst Technol, S-10691 Stockholm, Sweden
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 05期
关键词：
D O I：
10.1063/1.2008355
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：1
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