AlGaN Nanowire Photonic Crystals: Design, Epitaxy, and High Efficiency Deep UV LEDs

被引：0
|
作者：
Liu, Xianhe [1 ,2 ]
Le, Binh H. [2 ]
Mashooq, Kishwar [1 ]
Mi, Zetian [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, 1301 Beal Ave, Ann Arbor, MI 48109 USA
[2] McGill Univ, Dept Elect & Comp Engn, 3480 Univ St, Montreal, PQ H3A 0E9, Canada
来源：
2018 IEEE PHOTONICS CONFERENCE (IPC) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the design and epitaxy of AlGaN nanowire photonic crystal LEDs. The light extraction efficiency can, in principle, reach >90% for TM polarized emission. We have demonstrated AlGaN nanowire photonic crystal LEDs at 280 nm with output power similar to 0.9 W/cm(2) at 250 A/cm(2).
引用
收藏
页数：2
相关论文
共 50 条
  • [1] Advances of AlGaN-based High-Efficiency Deep-UV LEDs
    Hirayama, Hideki
    OPTOELECTRONIC MATERIALS AND DEVICES V, 2011, 7987
  • [2] Recent Progress on Short-wavelength-emitting AlGaN Nanowire Deep UV LEDs
    Vafadar, Mohammad Fazel
    Zhao, Songrui
    2022 PHOTONICS NORTH (PN), 2022,
  • [3] Efficiency Limits in Coalesced AlGaN Nanowire Ultraviolet LEDs
    May, Brelon J.
    Hettiaratchy, Elline C.
    Wang, Binbin
    Selcu, Camelia M.
    Esser, Bryan D.
    Mccomb, David W.
    Myers, Roberto C.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (04):
  • [4] Degradation of external quantum efficiency of AlGaN UV LEDs grown by hydride vapor phase epitaxy
    Shmidt, Natalia
    Usikov, Alexander
    Shabunina, Eugenia
    Chernyakov, Anton
    Sakharov, Alexey
    Kurin, Sergey
    Antipov, Andrei
    Barash, Iosif
    Roenkov, Alexander
    Helava, Heikki
    Makarov, Yuri
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 4-5, 2015, 12 (4-5): : 349 - 352
  • [5] AlGaN Deep UV LEDs on Si Exploiting a Nanowire-assisted AlN Buffer Layer
    Zhang, Qihua
    Parimoo, Heemal
    Zhao, Songrui
    2022 PHOTONICS NORTH (PN), 2022,
  • [6] AlGaN nanowire deep ultraviolet LEDs with polarization enhanced tunnel junction and p-AlGaN layer by molecular beam epitaxy
    Vafadar, Mohammad Fazel
    Zhao, Songrui
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2022, 40 (05):
  • [7] The efficiency of UV LEDs based on GaN/AlGaN heterostructures
    Evseenkov, A. S.
    Tarasov, S. A.
    Kurin, S. Yu
    Usikov, A. S.
    Papchenko, B. P.
    Helava, H.
    Makarov, Yu N.
    Solomonov, A. V.
    17TH RUSSIAN YOUTH CONFERENCE ON PHYSICS AND ASTRONOMY (PHYSICA.SPB/2014), 2015, 661
  • [8] The Efficiency of UV LEDs Based on GaN/AlGaN Heterostructures
    Eyseenkov, A. S.
    Tarasov, S. A.
    Lamkin, I. A.
    Solomonov, A. V.
    Kurin, S. Yu.
    PROCEEDINGS OF THE 2015 IEEE NORTH WEST RUSSIA SECTION YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING CONFERENCE (2015 ELCONRUSNW), 2015, : 27 - 29
  • [9] Advances in AlGaN-based deep UV LEDs
    Crawford, MH
    Allerman, AA
    Fischer, AJ
    Bogart, KHA
    Lee, SR
    Chow, WW
    Wieczorek, S
    Kaplar, RJ
    Kurtz, SR
    GaN, AIN, InN and Their Alloys, 2005, 831 : 545 - 556
  • [10] Residual Al Adatoms Driven Epitaxy of AlGaN QWs for High-Performance UV LEDs
    Li, Tai
    Chen, Zhaoying
    Wang, Tao
    Luo, Wei
    Tao, Renchun
    Yuan, Zexing
    Lu, Tongxin
    Guo, Yucheng
    Yuan, Ye
    Liu, Shangfeng
    Kang, Junjie
    Wang, Ping
    Sheng, Bowen
    Liu, Fang
    Wang, Qi
    Zhou, Shengqiang
    Shen, Bo
    Wang, Xinqiang
    ADVANCED MATERIALS, 2025,
12345