High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry

被引：37

作者：

Jalabert, Laurent ^{[1
]}

Dubreuil, Pascal ^{[1
]}

Carcenac, Franck ^{[1
]}

Pinaud, Sebastien ^{[1
]}

Salvagnac, Ludovic ^{[1
]}

Granier, Hugues ^{[1
]}

Fontaine, Chantal ^{[1
]}

机构：

[1] Univ Toulouse, LAAS CNRS, F-31077 Toulouse 4, France

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 5-6期

关键词：

GaAs nanowires; top-down; plasma etching; ICP-RIE; Cl-2/N-2; chemistry;

D O I：

10.1016/j.mee.2008.01.063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an experimental study of GaAs etching by ICP-RIE based on Cl-2:N-2 chemistry. The influence of the RF source power, the chlorine dilution, the RF platen power, and the process pressure at several substrate temperatures are investigated. An optimized process is proposed to get routinely GaAs nanowires of 1 mu m high and about 30 nm in diameter with a full top-down approach combining electron beam lithography and Ni lift-off steps. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1173 / 1178

页数：6

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