High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry

被引：37
|
作者：
Jalabert, Laurent [1 ]
Dubreuil, Pascal [1 ]
Carcenac, Franck [1 ]
Pinaud, Sebastien [1 ]
Salvagnac, Ludovic [1 ]
Granier, Hugues [1 ]
Fontaine, Chantal [1 ]
机构：
[1] Univ Toulouse, LAAS CNRS, F-31077 Toulouse 4, France
来源：
MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 5-6期
关键词：
GaAs nanowires; top-down; plasma etching; ICP-RIE; Cl-2/N-2; chemistry;
D O I：
10.1016/j.mee.2008.01.063
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report an experimental study of GaAs etching by ICP-RIE based on Cl-2:N-2 chemistry. The influence of the RF source power, the chlorine dilution, the RF platen power, and the process pressure at several substrate temperatures are investigated. An optimized process is proposed to get routinely GaAs nanowires of 1 mu m high and about 30 nm in diameter with a full top-down approach combining electron beam lithography and Ni lift-off steps. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1173 / 1178
页数：6
相关论文
共 50 条
  • [1] ICP-RIE etching of self-aligned InP based HBTs with Cl2/N2 chemistry
    Topaloglu, S.
    Prost, W.
    Tegude, F. -J.
    MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1601 - 1605
  • [2] An ICP-RIE etching process for InP-based photonic crystals using Cl2/Ar/N2 chemistry
    Strasser, P
    Wüest, R
    Robin, F
    Rauscher, K
    Wild, B
    Erni, D
    Jacke, H
    2005 International Conference on Indium Phosphide and Related Materials, 2005, : 242 - 245
  • [3] ICP-RIE Dry Etching Using Cl2-based on GaN
    Rosli, Siti Azlina
    Aziz, Azlan Abdul
    Hashim, Md Roslan
    SAINS MALAYSIANA, 2011, 40 (01): : 79 - 82
  • [4] AN RIE PROCESS FOR GAAS USING CL2
    GAGNE, C
    SOLID STATE TECHNOLOGY, 1988, 31 (05) : 183 - 187
  • [5] ICP-RIE etching of polar, semi-polar and non-polar AlN: comparison of Cl2/Ar and Cl2/BCl3/Ar plasma chemistry and surface pretreatment
    Shah, Amit P.
    Rahman, A. Azizur
    Bhattacharya, Arnab
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (01)
  • [6] Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP
    Carlstrom, C. F.
    van der Heijden, R.
    Andriesse, M. S. P.
    Karouta, F.
    van der Heijden, R. W.
    van der Drift, E.
    Salemink, H. W. M.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (05): : 1675 - 1683
  • [7] N2 effect on GaAs etching at 150 mTorr capacitively-coupled Cl2/N2 plasma
    Park, Y. H.
    Kim, J. K.
    Lee, J. H.
    Joo, Y. W.
    Noh, H. S.
    Lee, J. W.
    Pearton, S. J.
    MICROELECTRONIC ENGINEERING, 2010, 87 (04) : 548 - 552
  • [8] Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases
    Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
    不详
    不详
    J Appl Phys, 3 (1970-1974):
  • [9] Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases
    Sheu, JK
    Su, YK
    Chi, GC
    Jou, MJ
    Liu, CC
    Chang, CM
    Hung, WC
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) : 1970 - 1974
  • [10] Limitations of Cl2/O2-based ICP-RIE of deep holes for planar photonic crystals in InP
    Kaspar, Peter
    Fougner, Christopher
    Kappeler, Roman
    Jaeckel, Heinz
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2, 2012, 9 (02): : 239 - 242
12345