Effect of bismuth dopant on the dielectric properties of modified As2Se3

被引：0
|
作者：
Castro, R. A. [1 ]
Anisimova, N. I. [1 ]
Bordovsky, V. A. [1 ]
Grabko, G. I. [1 ]
机构：
[1] Herzen State Pedag Univ Russia, St Petersburg 191186, Russia
来源：
PHYSICS OF THE SOLID STATE | 2011年 / 53卷 / 03期
关键词：
GLASSY CHALCOGENIDE SEMICONDUCTORS; SINGLE-CRYSTALS; LAYERS;
D O I：
10.1134/S1063783411030140
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A comparative analysis has been performed for the specific features of the dispersion of the components of the complex permittivity for pure and bismuth-doped thin films of amorphous arsenic triselenide. A correlation between the experimental data and theoretical calculations of similar characteristics obtained in previous studies has been found. The mechanisms of the effects observed have been discussed.
引用
收藏
页码：458 / 461
页数：4
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