Low-voltage, high-efficiency nondoped phosphorescent organic light-emitting devices with double-quantum-well structure

被引：24
|
作者：
Liu, Shumei [1 ,2 ,3 ]
Li, Bin [1 ,2 ]
Zhang, Liming [1 ,2 ]
Yue, Shumei [1 ,2 ]
机构：
[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
[3] Jilin Univ, Dept Mat Sci & Engn, Changchun 130023, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 16期
关键词：
IRIDIUM COMPLEX; DIODES; ELECTROLUMINESCENCE; EMISSION; HOST;
D O I：
10.1063/1.3581216
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-voltage and high-efficiency nondoped phosphorescent organic light-emitting devices are fabricated by introducing a simple triplet double-quantum-well structure with an Ir(III) complex as potential well layer (PWL) and emitting layer (EML). The effects of various potential barrier layer (PBL) on device performances are discussed. Remarkably, the device with 1,3,5-tris(N-phenyl-benzimidazol-2-yl) benzene (TPBi) as PBL shows a low turn-on voltage of 2.30 V, a maximum power efficiency of 30.5 lm/W at 2.65 V and 24.5 lm/W with 1000 cd/m(2) at 3.75 V. We attribute these to the efficient carrier/exciton confinement function of TPBi and the improvement of carrier injection/balance in PWL/EML by self-balancing effect. (C) 2011 American Institute of Physics. [doi:10.1063/1.3581216]
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页数：3
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