A New Extraction Method of Trap States in Amorphous InGaZnO Thin-Film Transistors

被引：13
|
作者：
Qiang, Lei [1 ]
Yao, Ruo-He [1 ]
机构：
[1] S China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China
来源：
JOURNAL OF DISPLAY TECHNOLOGY | 2015年 / 11卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Amorphous InGaZnO (a-IGZO); thin-film transistors (TFTs); density of subgap states; nonuniform; SURFACE-POTENTIAL MODEL; THRESHOLD VOLTAGE MODEL; INTERFACE STATE; C-V; CAPACITANCE; MOSFETS; TFTS; DENSITIES;
D O I：
10.1109/JDT.2014.2387378
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method to extract the density of subgap states in amorphous InGaZnO thin-film transistors is proposed. The nonuniform characteristic of surface potential along the channel has been taken into account. The variation of interface state density with the applied bias voltage is derived from the capacitance-voltage characteristic. In addition, by combining the obtained density of interface states with the subthreshold swing, the energy distribution of bulk traps is determined. Results fit well with the experimental data.
引用
收藏
页码：325 / 329
页数：5
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