Study of traps in low-temperature polysilicon thin film transistors using a current transient method

被引：5

作者：

Zhu, Hui ^{[1
]}

Xie, Na ^{[1
]}

Wang, Si ^{[1
]}

Huang, Zeng ^{[1
]}

Fang, Zhixuan ^{[1
]}

Liu, Zheng ^{[2
]}

Li, Dong ^{[2
]}

Feng, Shiwei ^{[1
]}

Guo, Chunsheng ^{[1
]}

Zhang, Yamin ^{[1
]}

Zhou, Lixing ^{[1
]}

Liu, Bo ^{[1
]}

机构：

[1] Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

[2] BOE Technol Grp Co Ltd, Beijing, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2022年 / 37卷 / 01期

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

low-temperature polysilicon thin film transistors; trap characteristics; current transient method; negative bias temperature instability; LOW-FREQUENCY NOISE; TFT;

D O I：

10.1088/1361-6641/ac3373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The trap characteristics of low-temperature polysilicon thin film transistors (TFTs) are studied using a current transient method that is based on the trapping and detrapping of charge carriers from the trap sites in the device. Analysis of the measured current transient curve allowed three types of detrapping behavior to be identified, each of which displayed a different time constant, activation energy, and spatial position. This current transient method can be integrated into the negative bias temperature instability stress test used for the reliability study. The peak amplitudes of the traps increase because of the stress applied in the test, thus demonstrating that the degradation mechanism of the TFTs is closely related to changes in the traps in these devices.

引用

页数：5

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