Spectral hole-burning and carrier-heating dynamics in quantum-dot amplifiers: Comparison with bulk amplifiers

被引：0
|
作者：
Borri, P
Langbein, W
Hvam, JM
Heinrichsdorff, F
Mao, MH
Bimberg, D
机构：
[1] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
[2] Univ Dortmund, Lehrstuhl Expt Phys EIIb, D-44227 Dortmund, Germany
[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 224卷 / 02期
关键词：
D O I：
10.1002/1521-3951(200103)224:2<419::AID-PSSB419>3.3.CO;2-A
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The ultrafast gain dynamics in an electrically pumped InAs/InGaAs/GaAs quantum-dot amplifier are measured at room temperature with femtosecond resolution, and compared with results on an InGaAsP bulk amplifier. The role of spectral hole burning and carrier heating in the recovery of the gain compression is investigated. Reduced carrier heating for both gain and refractive index dynamics of the quantum-dot device is found, which is a promising prerequisite for high-speed applications.
引用
收藏
页码：419 / 423
页数：5
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