Non-Gaussian transport measurements and the Einstein relation in amorphous silicon

被引：164

作者：

Gu, Q ^{[1
]}

Schiff, EA ^{[1
]}

Grebner, S ^{[1
]}

Wang, F ^{[1
]}

Schwarz, R ^{[1
]}

机构：

[1] TECH UNIV MUNICH,DEPT PHYS,D-85747 GARCHING,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.76.3196

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose an experimental procedure for testing the Einstein relation for carrier drift and diffusion in semiconductors exhibiting non-Gaussian or dispersive transport. We present corresponding hole time-of-flight and steady-state photocarrier grating measurements in hydrogenated amorphous silicon (a-Si:H). For a range of mobilities 10(-5)-10(-2) cm(2)/V s we find that our estimates of hole diffusion are approximately twice as large as predicted by the Einstein relation and the mobility measurements. We consider the deviation to represent an upper bound to any true failure of the Einstein relation for hole transport in a-Si:H.

引用

页码：3196 / 3199

页数：4

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