InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

被引：4

作者：

Kachkanov, V. ^{[1
]}

Dolbnya, I. P. ^{[1
]}

O'Donnell, K. P. ^{[2
]}

Martin, R. W. ^{[2
]}

Edwards, P. R. ^{[2
]}

Pereira, S. ^{[3
]}

机构：

[1] Diamond Light Source Ltd, Didcot OX11 0DE, Oxon, England

[2] Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland

[3] Univ Aveiro, Dept Phys, CICECO, P-3810193 Aveiro, Portugal

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 18期

关键词：

GAN; DIFFRACTION; HETEROSTRUCTURE; DIFFRACTOMETRY;

D O I：

10.1063/1.3658619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content similar to 20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that "seed" InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with "seeds" nucleated on strain fields generated by the a-type edge dislocations. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3658619]

引用

页数：3

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